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 MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
February 2008
MCT5201M, MCT5210M, MCT5211M Low Input Current Phototransistor Optocouplers
Features
High CTRCE(SAT) comparable to Darlingtons CTR guaranteed 0C to 70C High common mode transient rejection 5kV/s Data rates up to 150kbits/s (NRZ) Underwriters Laboratory (UL) recognized,
Description
The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1mA of LED input current. When an LED input current of 1.6mA is supplied data rates to 20K bits/s are possible. The MCT52XXM can easily interface LSTTL to LSTTL/ TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved.
file #E90700, volume 2
IEC60747-5-2 approved (ordering option V)
Applications
CMOS to CMOS/LSTTL logic isolation LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver Telephone ring detector AC line voltage sensing Switching power supply
Schematic
ANODE 1
6 BASE
6 1
CATHODE 2 5 COL
6 1
6
3 4 EMITTER
1
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF(pk) PD DETECTOR IC PD Continuous Collector Current Detector Power Dissipation Derate Linearly from 25C Continuous Forward Current Reverse Input Voltage Storage Temperature Operating Temperature Lead Solder Temperature
Parameters
Value
-55 to +150 -40 to +100 260 for 10 sec 260 3.5 50 6 3.0 75 1.0 150 150 2.0
Units
C C C mW mW/C mA V A mW mW/C mA mW mW/C
Total Device Power Dissipation @ 25C (LED plus detector) Derate Linearly From 25C
Forward Current - Peak (1 s pulse, 300 pps) LED Power Dissipation Derate Linearly From 25C
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 2
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Electrical Characteristics (TA = 25C unless otherwise specified)
Individual Component Characteristics Symbol
EMITTER VF VF TA VR CJ BVCEO BVCBO BVEBO ICER CCE CCB CEB Input Forward Voltage Forward Voltage Temp. Coefficient Reverse Voltage Junction Capacitance IF = 5mA IF = 2mA IR = 10A VF = 0V, f = 1.0MHz All All All All All All All All All All All 30 30 5 6 18 100 120 10 1 10 80 15 100 1.25 -1.75 1.5 V mV/C V pF V V V nA pF pF pF
Parameters
Test Conditions
Device
Min.
Typ.* Max. Units
DETECTOR Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Dark Current Capacitance, Collector to Emitter Capacitance, Collector to Base Capacitance, Emitter to Base IC = 10A, IF = 0 IE = 10A, IF = 0 VCE = 10V, IF = 0, RBE = 1M VCE = 0, f = 1MHz VCB = 0, f = 1MHz VEB = 0, f = 1MHz
Isolation Characteristics
Symbol
VISO RISO CISO CMH
Characteristic
Input-Output Isolation Voltage(10) Isolation Resistance(10) Isolation Capacitance
(9)
Test Conditions
f = 60Hz, t = 1 sec. VI-O = 500 VDC, TA = 25C VI-O = 0, f = 1 MHz VCM = 50 VP-P1, RL= 750, IF = 0 VCM = 50 VP-P , RL= 1K, IF = 0 VCM = 50 VP-P1, RL = 750, IF =1.6mA VCM = 50 VP-P1, RL= 1K, IF = 5mA
Device
All All All MCT5210M/11M MCT5201M MCT5210M/11M MCT5201M
Min. Typ.* Max.
7500 1011 0.4 5000 0.6
Units
Vac(peak) pF V/s
Common Mode Transient Rejection - Output HIGH
CML
Common Mode Transient Rejection - Output LOW
5000
V/s
*All typical TA = 25C
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 3
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Electrical Characteristics (Continued) (TA = 25C unless otherwise specified)
Transfer Characteristics Symbol Characteristics Test Conditions
IF = 5mA, VCE = 0.4V IF = 3.0mA, VCE = 0.4V IF = 1.6mA, VCE = 0.4V IF = 1.0mA, VCE = 0.4V CTR(CE) Current Transfer Ratio IF = 3.0mA, VCE = 5.0V (Collector to Emitter)(1) I = 1.6mA, V = 5.0V F CE IF = 1.0mA, VCE = 5.0V CTR(CB) Current Transfer Ratio Collector to Base(2) IF = 5mA, VCB = 4.3V IF = 3.0mA, VCE = 4.3V IF = 1.6mA, VCE = 4.3V IF = 1.0mA, VCE = 4.3V VCE(SAT) Saturation Voltage IF = 5mA, ICE = 6mA IF = 3.0mA, ICE = 1.8mA IF = 1.6mA, ICE = 1.6mA AC CHARACTERISTICS TPHL Propagation Delay HIGH-to-LOW(3) RL = 330 , RBE = RL = 3.3 k, RBE = 39k RL = 750 , RBE = RL = 4.7 k, RBE = 91k IF = 3.0mA, VCC = 5.0V IF = 1.6mA, VCC = 5.0V MCT5210M MCT5211M 10 7 14 15 17 24 MCT5201M MCT5210M MCT5211M 3 0.4 8 2.5 11 7 16 MCT5201M MCT5201M MCT5201M MCT5201M MCT5201M 12 1.1 2.5 10 16 13 15 20 13 30 s s s s 30 s s MCT5201M MCT5210M MCT5211M MCT5201M MCT5210M MCT5211M MCT5210M MCT5211M
Device
MCT5201M MCT5210M MCT5211M
Min. Typ.* Max. Units
120 60 100 75 70 150 110 0.28 0.2 0.3 0.25 0.4 0.4 0.4 V % % %
DC CHARACTERISTICS CTRCE(SAT) Saturated Current Transfer Ratio(1) (Collector to Emitter)
IF = 1.0mA, RL = 1.5 k, RBE = RL = 10 k, RBE = 160k VCC = 5.0V IF = 5mA VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330k TPLH Propagation Delay LOW-to-HIGH(4) RL = 330 , RBE = RL = 3.3 k, RBE = 39k RL = 750 , RBE = RL = 4.7 k, RBE = 91k RL = 1.5 k, RBE = IF = 3.0mA, VCC = 5.0V IF = 1.6mA, VCC = 5.0V
IF = 1.0mA, RL = 10 k, RBE = 160k VCC = 5.0V IF = 5mA VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330k
td tr ts tf
Delay Time(5) Rise Time(6) Storage Time(7) Fall Time(8)
VCE = 0.4V, RBE = 330k, IF = 5mA RL = 1 k, VCC = 5V VCE = 0.4V, RBE = 330k, IF = 5mA RL = 1 k, VCC = 5V VCE = 0.4V, RBE = 330 k, IF = 5mA RL = 1 k, VCC = 5V VCE = 0.4V, RBE = 330 k, IF = 5mA RL = 1 k, VCC = 5V
*All typicals at TA = 25C
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 4
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Notes: 1. DC Current Transfer Ratio (CTRCE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x 100%, at a specified voltage between the collector and emitter (VCE). 2. The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent(ICB) divided by the input LED current (IF) time 100%. 3. Referring to Figure 14 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3V point on the falling edge of the output pulse. 4. Referring to Figure 14 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3V point on the rising edge of the output pulse. 5. Delay time (td) is measured from 50% of rising edge of LED current to 90% of Vo falling edge. 6. Rise time (tr) is measured from 90% to 10% of Vo falling edge. 7. Storage time (ts) is measured from 50% of falling edge of LED current to 10% of Vo rising edge. 8. Fall time (tf) is measured from 10% to 90% of Vo rising edge. 9. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected). 10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 5
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Typical Performance Curves
NORMALIZED CURRENT TRANSFER RATIO
Fig. 1 LED Forward Voltage vs. Forward Current
2.0 VF - FORWARD VOLTAGE (V) 1.8 1.6 1.4
TA = -40C
1.4 1.2 1.0 0.8 0.6 0.4 0.2
Fig. 2 Normalized Current Transfer Ratio vs. Forward Current
1.2 1.0 0.8 0.1
TA = 25C TA = 100C
Normalized to: IF = 5mA VCE = 5V TA = 25C
1 10 IF - LED FORWARD CURRENT (mA)
100
0.0 0.1
1 10 IF - FORWARD CURRENT (mA)
NORMALIZED CURRENT TRANSFER RATIO
Fig. 3 Normalized CTR vs. Temperature
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 -20 0 20 40
Normalized to: IF = 5mA VCE = 5V TA = 25C IF = 10mA
Fig. 4 Normalized Collector vs. Collector - Emitter Voltage
10 NORMALIZED ICE - COLLECTOR - EMITTER CURRENT
IF = 10 mA
IF = 5mA
1
IF = 2 mA
IF = 5 mA IF = 1 mA IF = 0.5 mA
0.1 0.01 0.001
IF = 2mA IF = 1mA IF = 0.5mA IF = 0.2mA
IF = 0.2 mA
60
100
120
0.0001 0.1
Normalized to: IF = 5mA : VCE = 5V TA = 25C
1 VCE - COLLECTOR - EMITTER VOLTAGE (V)
10
TA - AMBIENT TEMPERATURE (C)
Fig. 5 Normalized Collector Base Photocurrent Ratio vs. Forward Current
100 NORMALIZED ICB - COLLECTOR BASE PHOTO CURRENT NORMALIZED - COLLECTOR BASE CURRENT 10
Fig. 6 Normalized Collector Base Current vs. Temperature
IF = 10 mA
10
1
IF = 5 mA IF = 2 mA
1
0.1
IF = 1 mA IF = 0.5 mA
0.1
Normalized to: IF = 5mA VCB = 4.3V TA = 25C
0.01 Normalized to:
IF = 5mA VCB = 4.3V TA = 25C
IF = 0.2 mA
0.01 0.1
1
10
100
0.001 -60
-40
-20
0
20
40
60
80
100
IF - FORWARD CURRENT (mA)
TA - AMBIENT TEMPERATURE (C)
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 6
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Typical Performance Curves (Continued)
Fig. 7 Collector-Emitter Dark Current vs. Ambient Temperature
10000
ICEO - DARK CURRENT (nA)
IF = 0mA VCE = 10V
Fig. 8 Switching Time vs. Ambient Temperature
30
SWITCHING TIME - t (s)
IF = 10mA VCC = 5V RL = 1K RBE = 330K Refer to Figure 13 for switching time circuit
1000 100 10 1
25 20 15 10 5
tf
tPLH
ts
tr
tPHL
td
0.1
0
10
20 30 40 50 60 70 80 90 TA - AMBIENT TEMPERATURE (C)
100
0 -40
-20
0
20
40
60
80
100
120
TA - AMBIENT TEMPERATURE (C)
Fig. 9 Switching Time vs. Ambient Temperature
30
SWITCHING TIME - t (s)
Fig. 10 Switching Time vs. Ambient Temperature
20
SWITCHING TIME - t (s)
IF = 5mA VCC = 5V RL = 1K RBE = 330K Refer to Figure 13 for switching time circuit
25 20
IF = 10mA Refer to Figure 13 for switching time circuit VCC = 5V RL = 1K RBE = 100K tf
16 12
tf tPLH
15 10
tPLH
8 4 0 -40
ts
ts
5
tr tPHL td
tr
tPHL td
0 -40
-20
0
20
40
60
80
100
120
-20
0
20
40
60
80
100
120
TA - AMBIENT TEMPERATURE (C)
TA - AMBIENT TEMPERATURE (C)
Fig. 11 Switching Time vs. Ambient Temperature
20
SWITCHING TIME - t (s)
Fig. 12 Switching Time vs. Base-Emitter Resistance
100
SWITCHING TIME - t (s)
t PLH I F = 1.6mA R L = 4.7K t PLH I F = 3mA R L = 3.3K
16 12
IF = 5mA VCC = 5V RL = 1K RBE = 100K
Refer to Figure 13 for switching time circuit
t PLH, I F = 1mA, RL = 10K
tf
8 4 0 -40
tPLH ts
10
t PHL, I F = 1mA, RL = 10K ttPHL, I F = 1.6mA, RL = 4.7K
t PHL, I F = 3mA, RL = 3.3K
tr
tPHL td
VCC = 5V TA = 25C
-20
0
20
40
60
80
100
120
1 10
100
1000
10000
TA - AMBIENT TEMPERATURE (C)
BASE-EMITTER RESISTANCE - RBE (k)
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 7
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Typical Electro-Optical Characteristics (TA = 25C unless otherwise specified
VCC = 5.0 V Pulse Gen ZO = 50 f = 10KHz 10% D.F. 1K VO Pulse Gen ZO = 50 f = 10KHz 10% D.F. VCC = 5.0 V 1K 4.7K
D1 IF monitor 100 330K IF monitor 100 330K VO
D2 D3 D4
tr, tf, td, ts TEST CIRCUIT Figure 13.
tPHL, tPLH TEST CIRCUIT
INPUT 50% (IF) 0 td 90% tPHL tPLH 1.3 V 10% 0 tr ts tf 1.3 V 10% 90%
OUTPUT (VO)
Figure 14. Switching Circuit Waveforms
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 8
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Package Dimensions
Through Hole
0.350 (8.89) 0.320 (8.13) Pin 1 ID
Surface Mount
0.350 (8.89) 0.320 (8.13) PIN 1 ID
0.260 (6.60) 0.240 (6.10)
0.260 (6.60) 0.240 (6.10)
0.390 (9.90) 0.332 (8.43)
SEATING PLANE
0.070 (1.77) 0.040 (1.02)
SEATING PLANE
0.014 (0.36) 0.010 (0.25)
0.320 (8.13)
0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25)
0.320 (8.13)
0.200 (5.08) 0.115 (2.93)
0.200 (5.08) 0.115 (2.93)
0.012 (0.30) 0.008 (0.20)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30)
0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41)
0.100 [2.54] 0.035 (0.88) 0.006 (0.16)
0.4" Lead Spacing
0.350 (8.89) 0.320 (8.13) PIN 1 ID
Recommended Pad Layout for Surface Mount Leadform
0.070 (1.78)
0.060 (1.52)
0.260 (6.60) 0.240 (6.10)
0.425 (10.79)
0.070 (1.77) 0.040 (1.02) SEATING PLANE
0.100 (2.54) 0.305 (7.75) 0.030 (0.76)
0.014 (0.36) 0.010 (0.25)
0.200 (5.08) 0.115 (2.93)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16)
Note: All dimensions are in inches (millimeters)
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 9
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Ordering Information
Option
No suffix S SR2 T V TV SV SR2V
Order Entry Identifier (Example)
MCT5201M MCT5201SM MCT5201SR2M MCT5201TM MCT5201VM MCT5201TVM MCT5201SVM MCT5201SR2VM Surface Mount Lead Bend
Description
Standard Through Hole Device (50 units per tube) Surface Mount; Tape and Reel (1,000 units per reel) 0.4" Lead Spacing IEC60747-5-2 IEC60747-5-2, 0.4" Lead Spacing IEC60747-5-2, Surface Mount IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)
Marking Information
1
MCT5201 V
3 4
2 6
X YY Q
5
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code, e.g., `7' Two digit work week ranging from `01' to `53' Assembly package code
*Note - Parts that do not have the `V' option (see definition 3 above) that are marked with date code `325' or earlier are marked in portrait format.
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 10
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
Carrier Tape Specification
12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 O1.5 MIN 1.75 0.10
11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3
0.1 MAX
10.1 0.20
O1.5 0.1/-0
User Direction of Feed
Reflow Profile
300 280 260 240 220 200 180 Time above 183C = 90 Sec >245C = 42 Sec 260C
C
160 140 120 100 80 60 40 20 0 0 60 120 180 33 Sec 1.822C/Sec Ramp up rate
270
360
Time (s)
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 11
MCT5201M, MCT5210M, MCT5211M -- Low Input Current Phototransistor Optocouplers
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM
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PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM -3 SuperSOTTM -6 SuperSOTTM -8
SupreMOSTM SyncFETTM
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The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
(c)1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.0
www.fairchildsemi.com 12


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